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F29C51002T - 2M-Bit CMOS Flash Memory

Description

TheF29C51002T/F29C51002B is a high speed 262,144 x 8 bit CMOS flash memory.

Writing or erasing the device is done with a single 5 Volt power supply.

The device has separate chip enable CE, write enable WE, and output enable OE controls to eliminate bus contention.

Features

  • a sector erase operation which allows each sector to be erased and reprogrammed without affecting data stored in other sectors. The device also supports full chip erase. Boot block architecture enables the device to boot from a protected sector located either at the top (F29C51002T) or the bottom (F29C51002B). All inputs and outputs are CMOS and TTL compatible. The F 29C51002T/ F 29C51002B is ideal for.

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Datasheet Details

Part number F29C51002T
Manufacturer SyncMOS
File Size 227.82 KB
Description 2M-Bit CMOS Flash Memory
Datasheet download datasheet F29C51002T Datasheet

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Other Datasheets by SyncMOS

Part Number Description
F29C51002B 2M-Bit CMOS Flash Memory
F29C51001B 1M-Bit 5-Volt CMOS Flash Memory
F29C51001T 1M-Bit 5-Volt CMOS Flash Memory

Full PDF Text Transcription

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( DataSheet : www.DataSheet4U.com ) SyncMOS F29C51002T/F29C51002B 2 MEGABIT (262,144 x 8 BIT) 5 VOLT CMOS FLASH MEMORY Description TheF29C51002T/F29C51002B is a high speed 262,144 x 8 bit CMOS flash memory. Writing or erasing the device is done with a single 5 Volt power supply. The device has separate chip enable CE, write enable WE, and output enable OE controls to eliminate bus contention. The F29C51002T/F29C51002B offers a combination of: Boot Block with Sector Erase/Write Mode. The end of write/erase cycle is detected by DATA Polling of I/O7 or by the Toggle Bit I/O6. The F 29C51002T/ F 29C51002B features a sector erase operation which allows each sector to be erased and reprogrammed without affecting data stored in other sectors. The device also supports full chip erase.
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