S29C51004T Datasheet PDF

SyncMOS S29C51004T

The S29C51004T/S29C51004B is a high speed 524,288 x 8 bit CMOS flash memory. The device has separate chip enable CE, write enable WE, and output enable OE controls to eliminate bus contention. The S29C51004T/S29C51004B offers a combination of: Boot Block with Sector Erase/Write Mode.

Part No.	S29C51004T
Datasheet	S29C51004T Download
Manufacturer	SyncMOS
Description	4M-Bit 5-Volt CMOS Flash Memory
Buy	Stock & Price

FEATURES

s s s s s s 512Kx8-bit Organization Address Access Time: 70, 90, 120 ns Single 5V ± 10% Power Supply Sector Erase Mode Operation 16KB Boot Block (lockable) 1K bytes per Sector, 512 Sectors – Sector-Erase Cycle Time: 10ms (Max) – Byte-Write Cycle Time: 35µs (Max) Minimum 10,000 Erase-Program Cycles Low power dissipation – Active Read Current: 20mA (Typ) – Active Program Current: 30mA (Typ) – Standby Current: 100 µA (Max) Hardware Data Protection Low VCC Program Inhibit Below 3.5V Self-timed write/erase operations with end-of-cycle detection – DATA Polling – Toggle Bit CMOS and TTL Interface Available in one versions – S29C51004T (Top Boot Block)

DESCRIPTION

Writing or erasing the device is done with a single 5 Volt power supply. The end of write/erase cycle is detected by DATA Polling of I/O7 or by the Toggle Bit I/O6. TheS29C51004T/S29C51004B features a sector erase operation which allows each sector to be erased and reprogrammed without affecting data stored in other sectors. The device also supports full chip erase.