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S29C51004B Datasheet

Manufacturer: SyncMOS

This datasheet includes multiple variants, all published together in a single manufacturer document.

S29C51004B datasheet preview

Datasheet Details

Part number S29C51004B
Datasheet S29C51004B S29C51004T Datasheet (PDF)
File Size 3.07 MB
Manufacturer SyncMOS
Description 4M-Bit 5-Volt CMOS Flash Memory
S29C51004B page 2 S29C51004B page 3

S29C51004B Overview

The S29C51004T/S29C51004B is a high speed 524,288 x 8 bit CMOS flash memory. Writing or erasing the device is done with a single 5 Volt power supply. The device has separate chip enable CE, write enable WE, and output enable OE controls to eliminate bus contention.

S29C51004B Key Features

  • Sector-Erase Cycle Time: 10ms (Max)
  • Byte-Write Cycle Time: 35µs (Max) Minimum 10,000 Erase-Program Cycles Low power dissipation
  • Active Read Current: 20mA (Typ)
  • Active Program Current: 30mA (Typ)
  • Standby Current: 100 µA (Max) Hardware Data Protection Low VCC Program Inhibit Below 3.5V Self-timed write/erase operati
  • DATA Polling
  • Toggle Bit CMOS and TTL Interface Available in one versions
  • S29C51004T (Top Boot Block)
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More Datasheets from SyncMOS

See all SyncMOS datasheets

Part Number Description
S29C51004T 4M-Bit 5-Volt CMOS Flash Memory
S29C51001B 1 MEGABIT / 5 VOLT CMOS FLASH MEMORY
S29C51001T 1 MEGABIT / 5 VOLT CMOS FLASH MEMORY
S29C51002B 2 MEGABIT / 5 VOLT CMOS FLASH MEMORY
S29C51002T 2 MEGABIT / 5 VOLT CMOS FLASH MEMORY

S29C51004B Distributor

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