S29C51004B - 4M-Bit 5-Volt CMOS Flash Memory

This page provides the datasheet information for the S29C51004B, a member of the S29C51004T 4M-Bit 5-Volt CMOS Flash Memory family.

Product Overview

SyncMOS

Part number	S29C51004B
Manufacturer	SyncMOS
File Size	3.07 MB
Description	4M-Bit 5-Volt CMOS Flash Memory
Datasheet	S29C51004B Datasheet
Additional preview pages of the S29C51004B datasheet.

The S29C51004T/S29C51004B is a high speed 524,288 x 8 bit CMOS flash memory.

Writing or erasing the device is done with a single 5 Volt power supply.

The device has separate chip enable CE, write enable WE, and output enable OE controls to eliminate bus contention.

s s s s s s 512Kx8-bit Organization Address Access Time: 70, 90, 120 ns Single 5V ± 10% Power Supply Sector Erase Mode Operation 16KB Boot Block (lockable) 1K bytes per Sector, 512 Sectors.
Sector-Erase Cycle Time: 10ms (Max).
Byte-Write Cycle Time: 35µs (Max) Minimum 10,000 Erase-Program Cycles Low power dissipation.
Active Read Current: 20mA (Typ).
Active Program Current: 30mA (Typ).
Standby Current: 100 µA (Max) Hardware Data Protection Low VCC Pro.

S29CD-G - Simultaneous Read/ Write Flash Memory (SPANSION)
S29CD-J - (S29CD-J / S29CL-J) Burst Mode Flash Memory (SPANSION)
S29CD016G - 16 Megabit (512 K x 32-Bit) CMOS 2.5 Volt-only Burst Mode / Dual Boot / Simultaneous Read/Write Flash Memory (SPANSION)
S29CD016G - Simultaneous Read/ Write Flash Memory (SPANSION)
S29CD016J - (S29CD016J / S29CL016J) Simultaneous Read/Write Flash Memory (SPANSION)
S29CD032G - CMOS 2.5 VOLT ONLY BURST MODE DUAL BOOT / SIMULTANEOUS READ /WRITE FLASH MEMORY (SPANSION)
S29CD032G - Simultaneous Read/ Write Flash Memory (SPANSION)
S29CL-J - (S29CD-J / S29CL-J) Burst Mode Flash Memory (SPANSION)
S29CL016J - (S29CD016J / S29CL016J) Simultaneous Read/Write Flash Memory (SPANSION)
S29 - Schottky Rectifiers (Fairchild Semiconductor)

Other Datasheets by SyncMOS

Published: Nov 4, 2005 |