Download the S29C51002B datasheet PDF.
This datasheet also covers the S29C51002T variant, as both devices belong to the same 2 megabit / 5 volt cmos flash memory family and are provided as variant models within a single manufacturer datasheet.
General Description
TheS29C51002T/S29C51002B is a high speed 262,144 x 8 bit CMOS flash memory.
Key Features
s 256Kx8-bit Organization s Address Access Time: 70, 90, 120, 150 ns s Single 5V ± 10% Power Supply s Sector Erase Mode Operation s 16KB Boot Block (lockable) s 512 bytes per Sector, 512 Sectors.
Sector-Erase Cycle Time: 10ms (Max).
Byte-Write Cycle Time: 35ms (Max) s Minimum 10,000 Erase-Program Cycles s Low power dissipation.
Active Read Current: 20mA (Typ).
Active Program Current: 30mA (Typ).
Standby Current: 100mA (Max) s Hardware Data Protection.
Full PDF Text Transcription for S29C51002B (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
S29C51002B. For precise diagrams, and layout, please refer to the original PDF.
SyncMOS Technologies Inc. S29C51002T/S29C51002B 2 MEGABIT (262,144 x 8 BIT) 5 VOLT CMOS FLASH MEMORY Features s 256Kx8-bit Organization s Address Access Time: 70, 90, 120...
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Features s 256Kx8-bit Organization s Address Access Time: 70, 90, 120, 150 ns s Single 5V ± 10% Power Supply s Sector Erase Mode Operation s 16KB Boot Block (lockable) s 512 bytes per Sector, 512 Sectors – Sector-Erase Cycle Time: 10ms (Max) – Byte-Write Cycle Time: 35ms (Max) s Minimum 10,000 Erase-Program Cycles s Low power dissipation – Active Read Current: 20mA (Typ) – Active Program Current: 30mA (Typ) – Standby Current: 100mA (Max) s Hardware Data Protection s Low VCC Program Inhibit Below 3.
S29C51002B Datasheet
