Overview
Maximum Repetitive Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current EGF1A 50 35 50 IFSM Peak Forward Surge Current EGF1B EGF1D EGF1G 100 200 400 70 140 280 100 200 400 1.0 30 EGF1J 600 EGF1K Unit 800 V Conditions 420 560 V 600 800 V A TL=110° C 8.3ms single half sine-wave 25 A superimposed on rated load (JEDEC Method) TAITRON COMPONENTS INCORPORATED Tel: (800)-TAITRON (800)-824-8766 (661)-257-6060 Fax: (800)-TAITFAX (800)-824-8329 (661)-257-6415 1.0A Sintered Glass Passivated Super Fast Rectifier EGF1A - EGF1K Symbol Description Maximum VF Instantaneous Forward Voltage Maximum DC IR Voltage Trr CJ RthJA Maximum Reverse Recovery Time Typical Junction Capacitance Typical Thermal Resistance TJ,TSTG Operating junction and Storage Temperature Range EGF1A EGF1B 0.95 EGF1D EGF1G 1.25 5.0 50 35 10 34 -55 to +175 EGF1J 1.70 EGF1K Unit Conditions 2.20 V IF=1.0 A TA=25° C µA TA=125° C IF=0.5A, IR=1.0A, nS Irr=0.25A pF VR=4V, f=1MHz °C / W Note °C Note: Thermal.
- Sintered glass passivated (SGP) rectifier chip
- Glass passivated cavity-free junction
- Ideal for surface mount automotive applications
- Built-in strain relief
- Easy pick and place
- High temperature soldering guaranteed:260°C/10 seconds, at terminals
- RoHS Compliance SMA Mechanical Data Case: Epoxy: Terminals: Polarity: Weight:
