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MMBT5401 - SMD High Voltage Transistor

General Description

MMBT5401 Marking Code 2L -VCBO Collector-Base Voltage 160 -VCEO Collector-Emitter Voltage 150 -VEBO Emitter-Base Voltage 5 -IC Collector Current 500 Ptot Power Dissipation up to TA=25°C 250 RθJA Thermal Resistance, Junction to Ambient 500 TJ Junction Temperature 150 TSTG Stor

Key Features

  • This device is designed for high voltage driver.

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Datasheet Details

Part number MMBT5401
Manufacturer TAITRON
File Size 200.97 KB
Description SMD High Voltage Transistor
Datasheet download datasheet MMBT5401 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SMD High Voltage Transistor (PNP) Features • This device is designed for high voltage driver applications • RoHS compliance Mechanical Data Case: Terminals: Weight: SOT-23, Plastic Package Solderable per MIL-STD-202G, Method 208 0.008 gram SMD High Voltage Transistor (PNP) MMBT5401 SOT-23 Maximum Ratings (T Ambient=25ºC unless noted otherwise) Symbol Description MMBT5401 Marking Code 2L -VCBO Collector-Base Voltage 160 -VCEO Collector-Emitter Voltage 150 -VEBO Emitter-Base Voltage 5 -IC Collector Current 500 Ptot Power Dissipation up to TA=25°C 250 RθJA Thermal Resistance, Junction to Ambient 500 TJ Junction Temperature 150 TSTG Storage Temperature Range -55 to +150 Unit V V V mA mW K/W °C °C TAITRON COMPONENTS INCORPORATED www.taitroncomponents.