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MMBTA13 - SMD Darlington Transistor

General Description

MMBTA13 MMBTA14 Marking Code 1M 1N VCBO Collector-Base Voltage 30 VCES Collector-Emitter Voltage 30 VEBO Emitter-Base Voltage 10 IC Collector Current 300 Ptot Power Dissipation up to TA=25°C 250 TJ Junction Temperature 150 TSTG Storage Temperature Range -55 to +150 Unit V V V

Key Features

  • This device is designed for.

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Datasheet Details

Part number MMBTA13
Manufacturer TAITRON
File Size 157.23 KB
Description SMD Darlington Transistor
Datasheet download datasheet MMBTA13 Datasheet

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Other Datasheets by TAITRON

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SMD Darlington Transistor (NPN) MMBTA13/MMBTA14 SMD Darlington Transistor (NPN) Features • This device is designed for applications requiring extremely High current gain at collector currents to 1.0A • RoHS compliance SOT-23 Mechanical Data Case: Terminals: Weight: SOT-23, Plastic Package Solderable per MIL-STD-202G, Method 208 0.008 gram Maximum Ratings (T Ambient=25ºC unless noted otherwise) Symbol Description MMBTA13 MMBTA14 Marking Code 1M 1N VCBO Collector-Base Voltage 30 VCES Collector-Emitter Voltage 30 VEBO Emitter-Base Voltage 10 IC Collector Current 300 Ptot Power Dissipation up to TA=25°C 250 TJ Junction Temperature 150 TSTG Storage Temperature Range -55 to +150 Unit V V V mA mW °C °C TAITRON COMPONENTS INCORPORATED www.taitroncomponents.