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TM3404FN - N-Channel High Density Trench MOSFET

Download the TM3404FN datasheet PDF. This datasheet also covers the TM3404GN variant, as both devices belong to the same n-channel high density trench mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • Super high dense cell trench design for low RDS(on).
  • Rugged and reliable.
  • Surface Mount package. SOT-23-3L D S G D G S Ordering Information TM3404 N Package Type : SOT-23-3L F : Pb Free G : Green (Halogen Free).

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (TM3404GN-TECHMOS.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number TM3404FN
Manufacturer TECH MOS
File Size 151.36 KB
Description N-Channel High Density Trench MOSFET
Datasheet download datasheet TM3404FN Datasheet

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Other Datasheets by TECH MOS

Part Number Description
TM3404GN N-Channel High Density Trench MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
TECH MOS Technology. N-Channel High Density Trench MOSFET TM3404GN TM3404FN PRODUCT SUMMARY VDSS ID RDS(on) (mΩ) Max 28 @ VGS = 10V 30V 5.8A 48 @ VGS = 4.5V FEATURES ●Super high dense cell trench design for low RDS(on). ●Rugged and reliable. ●Surface Mount package. SOT-23-3L D S G D G S Ordering Information TM3404 N Package Type : SOT-23-3L F : Pb Free G : Green (Halogen Free) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuousa @ TA = 25 °C -Pulse b Drain-Source Diode Forward Currenta Maximum Power Dissipationa TA=25ºC TA=75ºC Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM IS PD TJ,TSTG Limit 30 ± 20 5.8 23 4.3 1.25 0.
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