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TECH MOS Technology. N-Channel High Density Trench MOSFET
TM3404GN TM3404FN
PRODUCT SUMMARY
VDSS
ID RDS(on) (mΩ) Max
28 @ VGS = 10V 30V 5.8A
48 @ VGS = 4.5V
FEATURES
●Super high dense cell trench design for low RDS(on). ●Rugged and reliable. ●Surface Mount package.
SOT-23-3L
D S
G
D
G S
Ordering Information
TM3404
N
Package Type : SOT-23-3L
F : Pb Free G : Green (Halogen Free)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuousa @ TA = 25 °C -Pulse b
Drain-Source Diode Forward Currenta Maximum Power Dissipationa TA=25ºC
TA=75ºC Operating Junction and Storage Temperature Range
Symbol
VDS VGS ID IDM IS PD
TJ,TSTG
Limit
30 ± 20 5.8 23 4.3 1.25 0.
TM3404GN Datasheet
