BUF650 Datasheet | TEMIC Semiconductors

Features D Simple-s Witch-Off Transistor (SWOT) D HIGH SPEED technology D Planar passivation D 100 k Hz switching rate D Very low switching losses D .. Very low dynamic saturation D Very low operating temperature D Optimized RBSOA D High reverse voltage Applications Electronic lamp ballast circuits Switch-mode power supplies Absolute Maximum Ratings Tcase = 25°C, unless otherwise specified Parameter Collector-emitter voltage g Test Conditions Symbol VCEO VCEW VCES VEBO IC ICM IB IBM Ptot Tj Tstg Value 400 500 700 9 10 15 5 7.5 70 150 - 65 to +150 Unit V V V V A A A A W °C °C Emitter-base voltage Collector current Collector peak current Base current Base peak current Total power dissipation Junction temperature Storage temperature range Tcase ≤ 25° C Maximum Thermal Resistance Tcase = 25°C, unless otherwise specified Parameter Junction case Test Conditions Symbol Rth JC Value 1.78 Unit K/W TELEFUNKEN Semiconductors Rev. C2, 18-Jul-97 1 (8) Electrical Characteristics Tcase = 25°C, unless otherwise specified Parameter Collector cut-off current Collector-emitter breakdown voltage (figure 1) Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage g .. DC forward current transfer ratio Test Conditions VCE = 700 V VCE = 700 V; Tcase = 150° C IC = 300 m A; L = 125 m H; Imeasure = 100 m A IE = 1 m A IC = 1.6 A; IB = 0.4 A IC = 5 A; IB = 1.6 A IC = 1.6 A; IB = 0.4 A IC = 5 A; IB = 1.6 A VCE = 2 V; IC = 10 m A VCE = 2 V; IC = 1.6 A VCE = 2 V; IC = 5 A VCE = 5 V; IC = 10 A VS = 50 V; L = 1 m H; IC = 10 A; IB1 = 3.3 A; - IB2 = 1 A; - VBB = 5 V IC = 5 A; IB = 1 A, t = 1 m s IC = 5 A; IB = 1 A, t = 3 m s IC = 500 m A; VCE = 10 V; f = 1 MHz Symbol ICES ICES V(BR)CEO V(BR)EBO VCEsat VCEsat VBEsat VBEsat h FE h FE h FE h FE VCEW Min Typ Max 50 0.5 Unit m A m A V V V V V V 400 9 0.1 0.2 0.9 1 15 15 7 4 500 0.2 0.4 1 1.2 Collector-emitter working voltage Dynamic y saturation voltage g Gain bandwidth product VCEsatdyn VCEsatdyn f...