Datasheet4U Logo Datasheet4U.com

SI9945DY - Dual N-Channel Enhancement-Mode MOSFET

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
SI9945AEY Dual N-Channel 60-V (D-S)/ 175C MOSFET Vishay Siliconix
SI9945BDY Dual N-Channel 60-V (D-S) MOSFET Vishay
SI9940DY Dual N-Channel Enhancement Mode MOSFET Siliconix
SI9942DY Complimentary 20-V (D-S) MOSFET Vishay
SI9948AEY Dual P-Channel 60-V (D-S)/ 175C MOSFET Vishay Siliconix

Other Datasheets by TEMIC Semiconductors (now Microchip)

Part Number Description
Si9942DY Dual Enhancement-Mode MOSFET
Si9943DY Dual MOSFET
Si9944DY Dual N-Channel Enhancement-Mode MOSFET
SI9947DY Dual P-Channel Enhancement-Mode MOSFET
Si9948DY Dual P-Channel Enhancement-Mode MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Si9945DY Dual N-Channel Enhancement-Mode MOSFET Product Summary VDS (V) 60 rDS(on) (W) 0.10 @ VGS = 10 V 0.20 @ VGS = 4.5 V SO-8 S1 1 G1 2 S2 3 G2 4 8 D1 7 D1 6 D2 5 D2 Top View ID (A) "3.3 "2.5 D1 D1 D2 D2 G1 G2 S1 N-Channel MOSFET S2 N-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted) Parameter Symbol Limit Unit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C VDS VGS ID IDM IS PD TJ, Tstg 60 "20 "3.3 "2.6 10 1.7 2.0 1.