SI9945AEY Datasheet | Vishay

Vishay Siliconix Dual N-Channel 60-V (D-S), 175_C MOSFET PRODUCT SUMMARY VDS (V) 60 r DS(on) (W) 0.080 @ VGS = 10 V 0.100 @ VGS = 4.5 V ID (A) "3.7 "3.4 D1 D1 D2 D2 SO-8 S1 G1 S2 G2 1 2 3 4 Top View S1 N-Channel MOSFET S2 N-Channel MOSFET 8 7 6 5 D1 D1 D2 D2 G1 G2 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg Limit 60 "20 "3.7 "3.2 25 2 2.4 Unit W 1.7 - 55 to 175 _C THERMAL RESISTANCE RATINGS Parameter t v 10 sec Junction-to-Ambienta Steady State Notes a. Surface Mounted on 1” x 1” FR4 Board For SPICE model information via the Worldwide Web: http://.vishay.//product/spice.htm Document Number: 70758 S-57253- Rev. C, 24-Feb-98 .vishay. S Fax Back 408-970-5600 Rth JA 93 Symbol Typ Max Unit _C/W 2-1 Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) r DS(on) gfs VSD VDS = VGS, ID = 250 m A VDS = 0 V, VGS = "20 V VDS = 60 V, VGS = 0 V VDS = 60 V, VGS = 0 V, TJ = 55_C VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 3.7 A VGS = 4.5 V, ID = 3.4 A VDS = 15 V, ID = 3.7 A IS = 2.0 A, VGS = 0 V 20 0.06 0.075 11 1.2 0.080 0.100 1.0 "100 1 10 V n A m A A W S...