The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
Si9945AEY
Vishay Siliconix
Dual N-Channel 60-V (D-S), 175_C MOSFET
PRODUCT SUMMARY
VDS (V)
60
rDS(on) (W)
0.080 @ VGS = 10 V 0.100 @ VGS = 4.5 V
ID (A)
"3.7 "3.4
D1
D1
D2
D2
SO-8
S1 G1 S2 G2 1 2 3 4 Top View S1 N-Channel MOSFET S2 N-Channel MOSFET 8 7 6 5 D1 D1 D2 D2 G1 G2
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C
Symbol
VDS VGS ID IDM IS PD TJ, Tstg
Limit
60 "20 "3.7 "3.2 25 2 2.4
Unit
V
A
W 1.
SI9945AEY Datasheet
