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Si9948DY
Dual P-Channel Enhancement-Mode MOSFET
Product Summary
VDS (V) –60
rDS(on) (W) 0.28 @ VGS = –10 V 0.50 @ VGS = –4.5 V
ID (A) "2.0 "1.6
S1 S2
SO-8
S1 1 G1 2 S2 3 G2 4
8 D1 7 D1 6 D2 5 D2
Top View
G1 G2
D1 D1 P-Channel MOSFET
D2 D2 P-Channel MOSFET
Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C TA = 70_C
TA = 25_C TA = 70_C
VDS VGS
ID IDM IS
PD TJ, Tstg
–60 "20 "2.0 "1.6 "10 –2.0 2.0 1.
Si9948DY Datasheet
