SI9948AEY - Dual P-Channel 60-V (D-S)/ 175C MOSFET

Vishay

Datasheet Details

Part number	SI9948AEY
Manufacturer	Vishay
File Size	59.24 KB
Description	Dual P-Channel 60-V (D-S)/ 175C MOSFET
Datasheet	SI9948AEY Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
Si9948DY	Dual P-Channel Enhancement-Mode MOSFET	TEMIC
SI9948DY-NL	Dual P-Channel 60V MOSFET	VBsemi
SI9940DY	Dual N-Channel Enhancement Mode MOSFET	Siliconix
Si9942DY	Dual Enhancement-Mode MOSFET	TEMIC
SI9942DY	Complimentary 20-V (D-S) MOSFET	Vishay

Other Datasheets by Vishay

Part Number	Description
SI9945AEY	Dual N-Channel 60-V (D-S)/ 175C MOSFET
SI9910	Adaptive Power MOSFET Driver1
SI9912	Half-Bridge MOSFET Driver for Switching Power Supplies
SI9913	Dual MOSFET Bootstrapped Driver with Break-Before-Make
SI9925DY	Dual N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

Si9948AEY Vishay Siliconix Dual P-Channel 60-V (D-S), 175_C MOSFET PRODUCT SUMMARY VDS (V) –60 rDS(on) (W) 0.17 @ VGS = –10 V 0.26 @ VGS = –4.5 V ID (A) "2.6 "2.1 S1 S2 SO-8 S1 G1 S2 G2 1 2 3 4 Top View 8 7 6 5 D1 D1 D2 D2 D1 D1 D2 D2 G1 G2 P-Channel MOSFET P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg Limit –60 "20 "2.6 "2.2 "15 –2 2.4 Unit V A W 1.