TGD30H10K - N-Channel Enhancement Mode Power MOSFET

Datasheet Summary

Description

The TGD30H10K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

VDS =30V,ID =100A RDS(ON).

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TGD30H10K N-Channel Enhancement Mode Power MOSFET by TGD - Datasheet Preview — Datasheet preview – TGD30H10K

Datasheet Details

Part number	TGD30H10K
Manufacturer	TGD
File Size	1.18 MB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	TGD30H10K Datasheet
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Taiwan Goodark Technology Co.,Ltd TGD N-Channel Enhancement Mode Power MOSFET Description The TGD30H10K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. TGD30H10K General Features ● VDS =30V,ID =100A RDS(ON) <5.

Published: Jan 16, 2019 |