TGD30H10K - N-Channel Enhancement Mode Power MOSFET

General Description

The TGD30H10K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Key Features

VDS =30V,ID =100A RDS(ON).

📥 Download Datasheet

TGD30H10K n-channel enhancement mode power mosfet by TGD - Datasheet Preview

Datasheet Details

Part number	TGD30H10K
Manufacturer	TGD
File Size	1.18 MB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	TGD30H10K Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
TGD30N40P	Field Stop Trench IGBT	TRinno
TGD30N40P	IGBT	Trinno
TGD3A	Current Transducers	Topstek
TGD10A	Current Transducers	Topstek
TGD14A	Current Transducers	Topstek

Other Datasheets by TGD

Part Number	Description
TGD40H12K	N-Channel Enhancement Mode Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

Taiwan Goodark Technology Co.,Ltd TGD N-Channel Enhancement Mode Power MOSFET Description The TGD30H10K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. TGD30H10K General Features ● VDS =30V,ID =100A RDS(ON) <5.