TGD40H12K - N-Channel Enhancement Mode Power MOSFET

General Description

The TGD40H12K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Key Features

VDS =40V,ID =120A RDS(ON).

📥 Download Datasheet

TGD40H12K n-channel enhancement mode power mosfet by TGD - Datasheet Preview

Datasheet Details

Part number	TGD40H12K
Manufacturer	TGD
File Size	1.20 MB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	TGD40H12K Datasheet

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Taiwan Goodark Technology Co.,Ltd TGD40H12K TGD N-Channel Enhancement Mode Power MOSFET Description The TGD40H12K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =40V,ID =120A RDS(ON) <4.0mΩ @ VGS=10V RDS(ON) <7mΩ @ VGS=4.