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MMBT3906LT1 - PNP Transistor

General Description

The MMBT3906LT1 is designed for general purpose switching and amplifier applications.

Maximum Temperatures Storage Temperature -55~+150°C Junction Temperature+150°C Maximum Power Dissipation Total Power Dissipation (Ta=25°C) 250 mW Maximum Vol

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Datasheet Details

Part number MMBT3906LT1
Manufacturer TGS
File Size 28.74 KB
Description PNP Transistor
Datasheet download datasheet MMBT3906LT1 Datasheet

Full PDF Text Transcription (Reference)

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TIGER ELECTRONIC CO.,LTD MMBT3906LT1 PNP EPITAXIAL PLANAR TRANSISTOR Description The MMBT3906LT1 is designed for general purpose switching and amplifier applications. Absolute Maximum Ratings • Maximum Temperatures Storage Temperature............................................................................................... -55~+150°C Junction Temperature......................................................................................................+150°C • Maximum Power Dissipation Total Power Dissipation (Ta=25°C) ............................................................................... 250 mW • Maximum Voltages and Currents (Ta=25°C) VCBO Collector to Base Voltage .........................................................................................