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MMBT3906LT1 Datasheet

The MMBT3906LT1 is a PNP Transistor. Download the datasheet PDF and view key features and specifications below.

Part NumberMMBT3906LT1
ManufacturerTGS
Overview The MMBT3906LT1 is designed for general purpose switching and amplifier applications. Absolute Maximum Ratings • Maximum Temperatures Storage Temperature. ....................................... 5 V IC Collector Current ........................................................................................................ 200mA Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICEX VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 hFE1 hFE2 hFE3 hFE4 hFE5 f.
Part NumberMMBT3906LT1
DescriptionGeneral Purpose Transistor
ManufacturerMotorola Semiconductor
Overview MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBT3906LT1/D General Purpose Transistor PNP Silicon 1 BASE COLLECTOR 3 MMBT3906LT1 Motorola Preferred Device MAXIMUM RATINGS Rating . llector
  – Emitter Breakdown Voltage(3) (IC =
  –1.0 mAdc, IB = 0) Collector
  – Base Breakdown Voltage (IC =
  –10 mAdc, IE = 0) Emitter
  – Base Breakdown Voltage (IE =
  –10 mAdc, IC = 0) Base Cutoff Current (VCE =
  –30 Vdc, VEB =
  –3.0 Vdc) Collector Cutoff Current (VCE =
  –30 Vdc, VEB =
  –3.0 Vdc) 1. FR
  – 5 = .
Part NumberMMBT3906LT1
DescriptionTRANSISTOR
ManufacturerWEJ
Overview RoHS MMBT3906LT1 SOT-23 TRANSISTOR Dimensions(Unit:mm) SOT-23 GENERAL PURPOSE TRANSISTOR Complementary Pair with MMBT3904LT1. DCollector Dissipation:Pc=225mW Collector-Emitter Voltage:VCEO=-40V .,. r Saturation Voltage ECollector-Emitter Saturation Voltage WBase-Emitter Saturation Voltage (Ta=25 oC) Symbol MIN. TYP. MAX. Unit Condition BVCEO BVCBO BVEBO ICEO IEBO hFE1 hFE2 hFE3 hFE4 hFE5 VCE(sat) VCE(sat) VBE(sat) -40 -40 -5 60 80 100 60 30 -50 -50 300 -0.4 -0.25 -0.95 V IC=-1mA IB=0 V .