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tm TE CH
SDRAM
T436416A
4M x 16 SDRAM
1M x 16bit x 4Banks Synchronous DRAM
FEATURES
• 3.3V power supply • Four banks operation • LVTTL compatible with multiplexed address • All inputs are sampled at the positive going
edge of system clock
• Burst Read Single-bit Write operation • DQM for masking • Auto refresh and self refresh • 64ms refresh period (4K cycle) • MRS cycle with address key programs
- CAS Latency ( 2 & 3 ) - Burst Length ( 1 , 2 , 4 , 8 & full page) - Burst Type (Sequential & Interleave) • Available package type in 54 pin TSOP(II) • Operating temperature : 0 ~ +70 °C
ORDERING INFORMATION
PART NO.
MAX FREQUENCY
PACKAGE
T436416A-6S
166 MHz 54 pin TSOP(II)
T436416A-7S
143 MHz 54 pin TSOP(II)
T436416A-7.