Datasheet Summary
tm TE CH
SDRAM
4M x 16 SDRAM
1M x 16bit x 4Banks Synchronous DRAM
Features
- 3.3V power supply
- Four banks operation
- LVTTL patible with multiplexed address
- All inputs are sampled at the positive going edge of system clock
- Burst Read Single-bit Write operation
- DQM for masking
- Auto refresh and self refresh
- 64ms refresh period (4K cycle)
- MRS cycle with address key programs
- CAS Latency ( 2 & 3 )
- Burst Length ( 1 , 2 , 4 , 8 & full page)
- Burst Type (Sequential & Interleave)
- Available package type in 54 pin TSOP(II)
- Operating temperature : 0 ~ +70 °C
ORDERING INFORMATION
PART NO.
MAX FREQUENCY
PACKAGE
T436416A-6S
166 MHz 54 pin TSOP(II)
T436416A-7S...