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T436416A - 4M X 16 SDRAM

General Description

The T436416A is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits , fabricated with high performance CMOS technology .

Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clockcycle .

Key Features

  • 3.3V power supply.
  • Four banks operation.
  • LVTTL compatible with multiplexed address.
  • All inputs are sampled at the positive going edge of system clock.
  • Burst Read Single-bit Write operation.
  • DQM for masking.
  • Auto refresh and self refresh.
  • 64ms refresh period (4K cycle).
  • MRS cycle with address key programs - CAS Latency ( 2 & 3 ) - Burst Length ( 1 , 2 , 4 , 8 & full page) - Burst Type (Sequential & Interleave).

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Datasheet Details

Part number T436416A
Manufacturer TM
File Size 706.63 KB
Description 4M X 16 SDRAM
Datasheet download datasheet T436416A Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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tm TE CH SDRAM T436416A 4M x 16 SDRAM 1M x 16bit x 4Banks Synchronous DRAM FEATURES • 3.3V power supply • Four banks operation • LVTTL compatible with multiplexed address • All inputs are sampled at the positive going edge of system clock • Burst Read Single-bit Write operation • DQM for masking • Auto refresh and self refresh • 64ms refresh period (4K cycle) • MRS cycle with address key programs - CAS Latency ( 2 & 3 ) - Burst Length ( 1 , 2 , 4 , 8 & full page) - Burst Type (Sequential & Interleave) • Available package type in 54 pin TSOP(II) • Operating temperature : 0 ~ +70 °C ORDERING INFORMATION PART NO. MAX FREQUENCY PACKAGE T436416A-6S 166 MHz 54 pin TSOP(II) T436416A-7S 143 MHz 54 pin TSOP(II) T436416A-7.