Datasheet Summary
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅤ-H)
High-Efficiency DC/DC Converter Applications Notebook PC Applications Portable Equipment Applications
6.0±0.3
Unit: mm
0.5±0.1 8 1.27 0.4±0.1 5 0.05 M A
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- Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 15.5 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 2.3 mΩ (typ.) High forward transfer admittance: |Yfs| = 130 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 30 V) Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, ID = 1 mA)
5.0±0.2
0.15±0.05
1 5.0±0.2 0.95±0.05
0.595 A 0.166±0.05
S 1
0.05 S 4 1.1±0.2
0.6±0.1
4.25±...