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SB073P150-W-AL Datasheet Schottky Barrier Diode Wafer

Manufacturer: TRANSYS Electronics Limited

Overview: SB073P150-W-Ag/Al Schottky Barrier Diode Wafer 73 Mils, 150 Volt, 5 Amp Data.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Key Features

  • Oxide Passivated Junction Low Forward Voltage 150 º C Junction Operating Low Reverse Leakage Supplied as Wafers Platinum Barrier 1. Solderable Surface Ti/Ni/Ag - Suffix "Ag" 2. Wire Bond Surface Aluminium - Suffix "Al" Anode www. DataSheet4U. com Solderable Surface Ti/Ni/Ag Cathode Cathode Symbol Electrical Characteristics @ 25 C Maximum Repetitive Reverse Voltage (2) Maximum Forward Voltage (1)(2) Typical Average Forward Rectified Current (2) Reverse Leakage Current (2) Reverse Leakage Curr.

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