Power dissipation
PD: 450 mW (Tamb=25℃) Collector current
IF: 1 A Collector-base voltage
VR: 20 V Operating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃
SOD-123
Unit: mm
1. 6
2. 70 3. 70
0. 55.
Full PDF Text Transcription for B5817W (Reference)
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B5817W. For precise diagrams, and layout, please refer to the original PDF.
1. 05 B5817W SCHOTTKY BARRIER DIODE FEATURES Power dissipation PD: 450 mW (Tamb=25℃) Collector current IF: 1 A Collector-base voltage VR: 20 V Operating and storage junct...
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nt IF: 1 A Collector-base voltage VR: 20 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ SOD-123 Unit: mm 1. 6 2. 70 3. 70 0. 55 MARKING: SJ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Reverse breakdown voltage Reverse voltage leakage current Forward voltage Diode capacitance Symbol V(BR) IR VF CD Test conditions IR= 1mA VR=20V IF=1A IF=3A VR=4V, f=1MHz MIN MAX UNIT 20 V 1 0.45 0.
B5817W Datasheet
