B5817W
B5817W is SCHOTTKY BARRIER DIODE manufactured by TRANSYS.
1. 05
B5817W SCHOTTKY BARRIER DIODE
Features
Power dissipation
PD: 450 mW (Tamb=25℃) Collector current
IF: 1 A Collector-base voltage
VR: 20 V Operating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃
SOD-123
Unit: mm
1. 6
2. 70 3. 70
0. 55
MARKING: SJ
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Reverse breakdown voltage Reverse voltage leakage current Forward voltage Diode capacitance
Symbol V(BR) IR VF CD
Test conditions
IR= 1mA
VR=20V IF=1A IF=3A VR=4V, f=1MHz
UNIT
20 V
0.45 0.75
120 mA
V...
