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1. 05
B5817W SCHOTTKY BARRIER DIODE
FEATURES
Power dissipation
PD: 450 mW (Tamb=25℃) Collector current
IF: 1 A Collector-base voltage
VR: 20 V Operating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃
SOD-123
Unit: mm
1. 6
2. 70 3. 70
0. 55
MARKING: SJ
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Reverse breakdown voltage Reverse voltage leakage current Forward voltage Diode capacitance
Symbol V(BR) IR VF CD
Test conditions
IR= 1mA
VR=20V IF=1A IF=3A VR=4V, f=1MHz
MIN
MAX
UNIT
20 V
1
0.45 0.
B5817W Datasheet
