B5817WS - Schottky Barrier Diode

Galaxy Microelectronics

Key Features

Extremely low VF.
Low stored change,majority carrier conduction.
Low power loss/high efficient.
MSL 1.

B5817WS schottky barrier diode by Galaxy Microelectronics - Datasheet Preview

Datasheet Details

Part number	B5817WS
Manufacturer	Galaxy Microelectronics
File Size	145.70 KB
Description	Schottky Barrier Diode
Datasheet	B5817WS Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Production specification Schottky Barrier Diode FEATURES  Extremely low VF.  Low stored change,majority carrier conduction.  Low power loss/high efficient.  MSL 1. APPLICATIONS Pb Lead-free  For Use In Low Voltage, High Frequency Inverters  Free Wheeling, And Polarity Protection Applications B5817WS SOD-323 ORDERING INFORMATION Type No. Marking B5817WS SJ Package Code SOD-323 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Parameter symbol Non-Repetitive Peak reverse voltage VRM Peak repetitive Peak reverse voltage Working Peak Reverse voltage DC Reverse Voltage VRRM VRWM VR RMS Reverse Voltage Average Rectified output Current Peak forward surge current@=8.