B5818WS - Schottky Barrier Diode

Galaxy Microelectronics

Key Features

Extremely low VF.
Low stored change,majority carrier conduction.
Low power loss/high efficient.
MSL 1.

B5818WS schottky barrier diode by Galaxy Microelectronics - Datasheet Preview

Datasheet Details

Part number	B5818WS
Manufacturer	Galaxy Microelectronics
File Size	147.28 KB
Description	Schottky Barrier Diode
Datasheet	B5818WS Datasheet

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B5818W	Schottky Barrier Diode
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B5819WS	Schottky Barrier Diode

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Production specification Schottky Barrier Diode FEATURES  Extremely low VF .  Low stored change,majority carrier conduction  Low power loss/high efficient.  MSL 1. APPLICATIONS Pb Lead-free  For Use In Low Voltage, High Frequency Inverters.  Free Wheeling, And Polarity Protection Applications. B5818WS-B5819WS SOD-323 ORDERING INFORMATION Type No. Marking B5818WS B5819WS SK SL Package Code SOD-323 SOD-323 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Parameter symbol B5818WS Non-Repetitive Peak reverse voltage VRM 36 B5819WS 48 Unit V Peak repetitive Peak reverse voltage Working Peak Reverse voltage DC Reverse Voltage VRRM VRWM 30 40 V VR RMS Reverse Voltage Average Rectified output Current Peak forward surge current@=8.