TMD8N25Z Description
TMD8N25Z(G)/TMU8N25Z(G) 2.4 110 Unit ℃/W ℃/W 1/6 TMD8N25Z(G)/TMU8N25Z(G) : Pulse width limited by safe operating area 2. L=3.68mH, I AS = 8A, VDD = 50V, RG = 25Ω, Starting TJ= 25 ℃ 3 I SD ≤ 8A, di/dt ≤ 200A/µs , VDD ≤ BVDS, Starting TJ=.
TMD8N25Z Key Features
- Low gate charge
- 100% avalanche tested
- Improved dv/dt capability
- RoHS pliant
- Halogen free package
- JEDEC Qualification