TMP10N60A Datasheet | TRinno

Features - Low gate charge - 100% avalanche tested - Improved dv/dt capability - Ro HS pliant - Halogen free package - JEDEC Qualification TMP10N60A(G)/TMPF10N60A(G) BVDSS 600V N-channel MOSFET ID RDS(on) 10A <0.7W Device TMP10N60A / TMPF10N60A TMP10N60AG / TMPF10N60AG Package TO-220 / TO-220F TO-220 / TO-220F Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) TC = 25 ℃ TC = 100 ℃ Single Pulse Avalanche Energy (Note 2) Repetitive Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Power Dissipation TC = 25 ℃ Derate above 25 ℃ Peak Diode Recovery dv/dt (Note 3) Operating Junction and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds - Limited only by maximum junction temperature Marking TMP10N60A / TMPF10N60A TMP10N60AG / TMPF10N60AG Remark Ro HS Halogen Free Symbol VDSS VGS IDM EAS IAR EAR PD dv/dt TJ, TSTG TMP10N60A(G) TMPF10N60AG) 600 ±30 10 10 - 6.48 6.48 - 40 40 - 660 10 19.8 198 52 1.58 0.41 4.5...