TMP10N60G Datasheet | TRinno

Features - Low gate charge - 100% avalanche tested - Improved dv/dt capability - Ro HS pliant - Halogen free package - JEDEC Qualification TMP10N60/TMPF10N60 TMP10N60G/TMPF10N60G VDSS = 660 V @Tjmax ID = 10A RDS(on) = 0.75 W(max) @ VGS= 10 V Device TMP10N60 / TMPF10N60 TMP10N60G / TMPF10N60G Package TO-220 / TO-220F TO-220 / TO-220F Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) TC = 25 ℃ TC = 100 ℃ Single Pulse Avalanche Energy (Note 2) Repetitive Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Power Dissipation TC = 25 ℃ Derate above 25 ℃ Peak Diode Recovery dv/dt (Note 3) Operating Junction and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds - Limited only by maximum junction temperature Marking TMP10N60 / TMPF10N60 TMP10N60G / TMPF10N60G Remark Ro HS Halogen Free Symbol VDS VGS IDM EAS IAR EAR PD dv/dt TJ, TSTG TMP10N60(G) TMPF10N60(G) 600 ±30 10 10- 6.5 6.5- 40 40- 758 10 19.8 198 52 1.58 0.41 4.5...