TMP12N60 Datasheet | TRinno

Features - Low gate charge - 100% avalanche tested - Improved dv/dt capability - Ro HS pliant - Halogen free package - JEDEC Qualification TMP12N60/TMPF12N60 TMP12N60G/TMPF12N60G VDSS = 660 V @Tjmax ID = 12A RDS(on) = 0.65 W(max) @ VGS= 10 V Device TMP12N60 / TMPF12N60 TMP12N60G / TMPF12N60G Package TO-220 / TO-220F TO-220 / TO-220F Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) TC = 25 ℃ TC = 100 ℃ Single Pulse Avalanche Energy (Note 2) Repetitive Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Power Dissipation TC = 25 ℃ Derate above 25 ℃ Peak Diode Recovery dv/dt (Note 3) Operating Junction and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds - Limited only by maximum junction temperature Marking TMP12N60 / TMPF12N60 TMP12N60G / TMPF12N60G Remark Ro HS Halogen Free Symbol VDS VGS IDM EAS IAR EAR PD dv/dt TJ, TSTG TMP12N60(G) TMPF12N60(G) 600 ±30 12 12- 7.5 7.5- 48 48- 860 12 23.1 231 53 1.85 0.42 4.5...