TMPF5N50G Datasheet | TRinno

Features - Low gate charge - 100% avalanche tested - Improved dv/dt capability - Ro HS pliant - Halogen free package - JEDEC Qualification - Fast reverse recovery TMP5N50/TMPF5N50 TMP5N50G/TMPF5N50G VDSS = 550 V @Tjmax ID = 4.5A RDS(ON) = 1.65 W(max) @ VGS= 10 V Device TMP5N50 / TMPF5N50 TMP5N50G / TMPF5N50G Package TO-220 / TO-220F TO-220 / TO-220F Marking TMP5N50 / TMPF5N50 TMP5N50G / TMPF5N50G Remark Ro HS Halogen Free Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) TC = 25 ℃ TC = 100 ℃ Single Pulse Avalanche Energy (Note 2) Repetitive Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Power Dissipation TC = 25 ℃ Derate above 25 ℃ Peak Diode Recovery dv/dt (Note 3) Operating Junction and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds - Limited only by maximum junction temperature Symbol VDSS VGS IDM EAS IAR EAR PD dv/dt TJ, TSTG TMP5N50(G) TMPF5N50(G) 500 ±30 4.5 4.5 - 2.86...