TMPF5N50SG Datasheet | TRinno

Features - Low gate charge - 100% avalanche tested - Improved dv/dt capability - Ro HS pliant - Halogen free package - JEDEC Qualification - Fast reverse recovery TMP5N50SG/TMPF5N50SG VDSS = 550 V @Tjmax ID = 4A RDS(ON) = 1.85 W(max) @ VGS= 10 V Device Package TMP5N50SG / TMPF5N50SG TO-220 / TO-220F Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) TC = 25 ℃ TC = 100 ℃ Single Pulse Avalanche Energy (Note 2) Repetitive Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Power Dissipation TC = 25 ℃ Derate above 25 ℃ Peak Diode Recovery dv/dt (Note 3) Operating Junction and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds - Limited only by maximum junction temperature Marking TMP5N50SG / TMPF5N50SG Remark Halogen Free Symbol VDSS VGS IDM EAS IAR EAR PD dv/dt TJ, TSTG TMP5N50SG TMPF5N50SG 500 ±30 4 4- 2.8...