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TMU3N50AZ - N-channel MOSFET

Key Features

  • Low gate charge.
  • 100% avalanche tested.
  • Improved dv/dt capability.
  • RoHS compliant.
  • Halogen free package.
  • JEDEC Qualification.
  • Improved ESD performance D-PAK TMD3N50AZ(G)/TMU3N50AZ(G) BVDSS 500V N-channel MOSFET ID RDS(on) 2.5A < 2.8W I-PAK Device TMD3N50AZ / TMU3N50AZ TMD3N50AZG / TMU3N50AZG Package D-PAK/I-PAK D-PAK/I-PAK Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Not.

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Datasheet Details

Part number TMU3N50AZ
Manufacturer TRinno
File Size 444.26 KB
Description N-channel MOSFET
Datasheet download datasheet TMU3N50AZ Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification  Improved ESD performance D-PAK TMD3N50AZ(G)/TMU3N50AZ(G) BVDSS 500V N-channel MOSFET ID RDS(on) 2.5A < 2.