TMU3N80G - N-channel MOSFET

Key Features

Low gate charge.
100% avalanche tested.
Improved dv/dt capability.
RoHS compliant.
Halogen free package.
JEDEC Qualification TMD3N80G/TMU3N80G VDSS = 880 V @Tjmax ID = 3A RDS(on) = 4.2 W(max) @ VGS= 10 V D-PAK I-PAK D Device TMD3N80G/TMU3N80G Package D-PAK/I-PAK G S Marking TMD3N80G/TMU3N80G Remark Halogen Free Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) TC = 25 ℃ TC.

TMU3N80G n-channel mosfet by TRinno - Datasheet Preview

Datasheet Details

Part number	TMU3N80G
Manufacturer	TRinno
File Size	325.49 KB
Description	N-channel MOSFET
Datasheet	TMU3N80G Datasheet

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Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification TMD3N80G/TMU3N80G VDSS = 880 V @Tjmax ID = 3A RDS(on) = 4.