TT 2N2891
SILICON NPN TRANSISTOR
| Part No. | 2N2891 |
|---|---|
| Datasheet | 2N2891 Download |
| Manufacturer |  TT |
| Description | SILICON NPN TRANSISTOR |
| Buy | Stock & Price |
APPLICATIONS
(High Voltage).● Screening Options Available
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C unless otherwise stated) VCBO Collector – Base Voltage 100V VCEO Collector – Emitter Voltage 80V VEBO Emitter – Base Voltage 5V IC Continuous Collector Current 3A ICM Peak Collector Current 5A IB Base Current 0.5A PD Total Power Dissipation at TA = 25°C 0.8W Derate Above 25°C 4.57mW/°C PD Total Power Dissipation at TC = 25°C 5W Derate Above 25°C 28.6mW/°C TJ Junction Temperature Range -65 to +200°C Tstg Storage Temperature Range -65 to +200°C THERMAL PROPERTIES Symbols Parameters RθJA Thermal Resistance, Junction To Ambient RθJC Thermal Resistance, Junction To Case Max. 218.75 35 Units °C/W °C/W Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
