2N2896X - SILICON PLANAR EPITAXIAL NPN TRANSISTOR

TT Electronics

Datasheet Details

Part number	2N2896X
Manufacturer	TT Electronics
File Size	225.19 KB
Description	SILICON PLANAR EPITAXIAL NPN TRANSISTOR
Datasheet	2N2896X Datasheet

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SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2N2896X • High Voltage • Hermetic TO-18 Metal package. • Ideally suited for General Purpose Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO Collector – Base Voltage 140V VCEO Collector – Emitter Voltage 90V VCER Collector – Emitter Voltage 140V VEBO Emitter – Base Voltage 7V IC Continuous Collector Current 1.0A PD Total Power Dissipation at TA = 25°C 500mW Derate Above 25°C 2.86mW/°C PD Total Power Dissipation at TC = 25°C 1.8W Derate Above 25°C 10.