TT 2N2896X
SILICON PLANAR EPITAXIAL NPN TRANSISTOR
| Part No. | 2N2896X |
|---|---|
| Datasheet | 2N2896X Download |
| Manufacturer |  TT |
| Description | SILICON PLANAR EPITAXIAL NPN TRANSISTOR |
| Buy | Stock & Price |
APPLICATIONS
● Screening Options AvailableABSOLUTE MAXIMUM RATINGS
(TA = 25°C unless otherwise stated) VCBO Collector – Base Voltage 140V VCEO Collector – Emitter Voltage 90V VCER Collector – Emitter Voltage 140V VEBO Emitter – Base Voltage 7V IC Continuous Collector Current 1.0A PD Total Power Dissipation at TA = 25°C 500mW Derate Above 25°C 2.86mW/°C PD Total Power Dissipation at TC = 25°C 1.8W Derate Above 25°C 10.3mW/°C TJ Junction Temperature Range -65 to +200°C Tstg Storage Temperature Range -65 to +200°C THERMAL PROPERTIES Symbols Parameters RθJA Thermal Resistance, Junction To Ambient RθJC Thermal Resistance, Junction To Case Min. Typ. Max. Units 350 °C/W 97 °C/W Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders.
