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SILICON NPN POWER TRANSISTOR
2N3055
Features: • High Gain At High Current. • Hermetic TO-3 (TO-204AA) Metal Package. • Ideally Suited For General Purpose Switching and Amplifier Applications. • Screening Options Available.
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
VCBO
Collector - Base Voltage
VCEO
Collector - Emitter Voltage
VEBO
Emitter - Base Voltage
IC
Continuous Collector Current
IB
Base Cirrenr
PD
Total Power Dissipation at
TA = 25°C
Derate Above 25°C
PD
Total Power Dissipation at
TC = 25°C
Derate Above 25°C
TJ
Junction Temperature Range
Tstg
Storage Temperature Range
Thermal Properties
SYMBOL
PARAMETER
RθJA
Thermal Resistance, Junction to Ambient
RθJC
Thermal Resistance, Junction to Case
100V 70V 7V 15A 7A 6W 34.3mW/°C 117W 0.