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2N3055 Datasheet PDF

TT 2N3055

SILICON NPN POWER TRANSISTOR

Part No. 2N3055
Datasheet 2N3055 Download
Manufacturer
TT
Description SILICON NPN POWER TRANSISTOR
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2N3055 datasheet page 1 preview

FEATURES

:
● High Gain At High Current.
● Hermetic TO-3 (TO-204AA) Metal Package.
● Ideally Suited For General Purpose Switching and Amplifier

APPLICATIONS

.
● Screening Options Available.

ABSOLUTE MAXIMUM RATINGS

(TA = 25°C unless otherwise noted) VCBO Collector - Base Voltage VCEO Collector - Emitter Voltage VEBO Emitter - Base Voltage IC Continuous Collector Current IB Base Cirrenr PD Total Power Dissipation at TA = 25°C Derate Above 25°C PD Total Power Dissipation at TC = 25°C Derate Above 25°C TJ Junction Temperature Range Tstg Storage Temperature Range Thermal Properties SYMBOL PARAMETER RθJA Thermal Resistance, Junction to Ambient RθJC Thermal Resistance, Junction to Case 100V 70V 7V 15A 7A 6W 34.3mW/°C 117W 0.67W/°C -65 to +200°C -65 to +200°C MAX 29.17 1.5 UNITS °C/W °C/W General Note TT Electronics reserves the right to make changes in product specification without notice or liability. All information is subject to TT Electronics’ own data and is considered accurate at time of...
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