• Part: BDS20
  • Description: SILICON EPIBASE NPN DARLINGTON TRANSISTOR
  • Category: Transistor
  • Manufacturer: TT Electronics
  • Size: 797.59 KB
Download BDS20 Datasheet PDF
TT Electronics
BDS20
SILICON EPIBASE NPN DARLINGTON TRANSISTOR - High DC Current Gain - Hermetic Metal TO-220 Package - Designed For General Purpose Amplifiers and Low Speed Switching Applications - Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VCBO Collector - Base Voltage 80V VCEO Collector - Emitter Voltage 80V VEBO Emitter - Base Voltage 5V Continuous Collector Current 5A Base Current 0.1A Total Power Dissipation at TC = 25°C 35W Derate Above 25°C 0.2W/°C Junction Temperature Range -65 to +200°C Tstg Storage Temperature Range -65 to +200°C THERMAL PROPERTIES Symbols Parameters RθJC Thermal Resistance, Junction To...