BDS20 - SILICON EPIBASE NPN DARLINGTON TRANSISTOR

Datasheet Details

Part number	BDS20
Manufacturer	TT
File Size	797.59 KB
Description	SILICON EPIBASE NPN DARLINGTON TRANSISTOR
Datasheet	BDS20 Datasheet
Additional preview pages of the BDS20 datasheet.

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SILICON EPIBASE NPN DARLINGTON TRANSISTOR BDS20 • High DC Current Gain • Hermetic Metal TO-220 Package • Designed For General Purpose Amplifiers and Low Speed Switching Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VCBO Collector – Base Voltage 80V VCEO Collector – Emitter Voltage 80V VEBO Emitter – Base Voltage 5V IC Continuous Collector Current 5A IB Base Current 0.1A PD Total Power Dissipation at TC = 25°C 35W Derate Above 25°C 0.2W/°C TJ Junction Temperature Range -65 to +200°C Tstg Storage Temperature Range -65 to +200°C THERMAL PROPERTIES Symbols Parameters RθJC Thermal Resistance, Junction To Case Min. Typ. Max.

Published: Jul 30, 2024 |