BDS20 - SILICON EPIBASE NPN DARLINGTON TRANSISTOR

TT Electronics

Datasheet Details

Part number	BDS20
Manufacturer	TT Electronics
File Size	797.59 KB
Description	SILICON EPIBASE NPN DARLINGTON TRANSISTOR
Datasheet	BDS20 Datasheet

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SILICON EPIBASE NPN DARLINGTON TRANSISTOR BDS20 • High DC Current Gain • Hermetic Metal TO-220 Package • Designed For General Purpose Amplifiers and Low Speed Switching Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VCBO Collector – Base Voltage 80V VCEO Collector – Emitter Voltage 80V VEBO Emitter – Base Voltage 5V IC Continuous Collector Current 5A IB Base Current 0.1A PD Total Power Dissipation at TC = 25°C 35W Derate Above 25°C 0.2W/°C TJ Junction Temperature Range -65 to +200°C Tstg Storage Temperature Range -65 to +200°C THERMAL PROPERTIES Symbols Parameters RθJC Thermal Resistance, Junction To Case Min. Typ. Max.