BDS21
SILICON EPIBASE PNP DARLINGTON TRANSISTOR
- High DC Current Gain
- Hermetic Metal TO-220 Package
- Designed For General Purpose Amplifiers and
Low Speed Switching Applications
- Screening Options Available
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)
VCBO
Collector
- Base Voltage
-80V
VCEO
Collector
- Emitter Voltage
-80V
VEBO
Emitter
- Base Voltage
-5V
Continuous Collector Current
-5A
Base Current
-0.1A
Total Power Dissipation at TC = 25°C
35W
Derate Above 25°C
0.2W/°C
Junction Temperature Range
-65 to +200°C
Tstg
Storage Temperature Range
-65 to +200°C
THERMAL PROPERTIES
Symbols Parameters
RθJC
Thermal Resistance, Junction To...
