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BDX66 Datasheet PDF

TT BDX66

PNP DARLINGTON SILICON POWER TRANSISTOR

Part No. BDX66
Datasheet BDX66 Download
Manufacturer
TT
Description PNP DARLINGTON SILICON POWER TRANSISTOR
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BDX66 datasheet page 1 preview

APPLICATIONS

● Screening Options Available

ABSOLUTE MAXIMUM RATINGS

(TC = 25°C unless otherwise stated) VCEO VCBO VEBO ICM IB PD TJ Tstg BDX66 66A 66B 66C Collector – Emitter Voltage -60V -80V -100V -120V Collector – Base Voltage -60V -80V -100V -120V Emitter – Base Voltage -5V Peak Collector Current -20A Base Current -0.25A Total Power Dissipation at TC = 25°C 150W De-rate Linearly Above 25°C 0.855 W/°C Junction Temperature Range -55 to +200°C Storage Temperature Range -55 to +200°C THERMAL PROPERTIES Symbols Parameters RθJC Thermal Resistance, Junction To Case Max. 1.17 Units °C/W Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders.
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