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PNP DARLINGTON SILICON POWER TRANSISTOR
BDX 66, A, B, C
• Hermetic Metal TO3 Package. • Ideal for General Purpose Low Frequency Switching Applications • Screening Options Available
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)
VCEO VCBO VEBO ICM IB PD
TJ Tstg
BDX66 66A 66B 66C
Collector – Emitter Voltage
-60V -80V -100V -120V
Collector – Base Voltage
-60V -80V -100V -120V
Emitter – Base Voltage
-5V
Peak Collector Current
-20A
Base Current
-0.25A
Total Power Dissipation at TC = 25°C
150W
De-rate Linearly Above 25°C
0.855 W/°C
Junction Temperature Range
-55 to +200°C
Storage Temperature Range
-55 to +200°C
THERMAL PROPERTIES
Symbols Parameters
RθJC
Thermal Resistance, Junction To Case
Max. 1.
BDX66 Datasheet
