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BDX66C - PNP DARLINGTON SILICON POWER TRANSISTOR

Download the BDX66C datasheet PDF. This datasheet also covers the BDX66 variant, as both devices belong to the same pnp darlington silicon power transistor family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (BDX66-TT.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number BDX66C
Manufacturer TT Electronics
File Size 179.72 KB
Description PNP DARLINGTON SILICON POWER TRANSISTOR
Datasheet download datasheet BDX66C Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PNP DARLINGTON SILICON POWER TRANSISTOR BDX 66, A, B, C • Hermetic Metal TO3 Package. • Ideal for General Purpose Low Frequency Switching Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VCEO VCBO VEBO ICM IB PD TJ Tstg BDX66 66A 66B 66C Collector – Emitter Voltage -60V -80V -100V -120V Collector – Base Voltage -60V -80V -100V -120V Emitter – Base Voltage -5V Peak Collector Current -20A Base Current -0.25A Total Power Dissipation at TC = 25°C 150W De-rate Linearly Above 25°C 0.855 W/°C Junction Temperature Range -55 to +200°C Storage Temperature Range -55 to +200°C THERMAL PROPERTIES Symbols Parameters RθJC Thermal Resistance, Junction To Case Max. 1.