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BFY52 - SILICON NPN TRANSISTOR

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SILICON NPN TRANSISTOR BFY52 • V(BR)CEO = 20V (Min). • Hermetic TO-39 Metal Package. • Ideally Suited General Purpose Amplifier Applications • Screening Options Available • ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO Collector – Base Voltage 40V VCEO Collector – Emitter Voltage 20V VEBO Emitter – Base Voltage 6V IC Continuous Collector Current 1.0A PD Total Power Dissipation at TA = 25°C 0.8W Derate Above 25°C 4.57mW/°C PD Total Power Dissipation at TC = 25°C 5W Derate Above 25°C 28.6mW/°C TJ Junction Temperature Range -65 to +200°C Tstg Storage Temperature Range -65 to +200°C THERMAL PROPERTIES Symbols Parameters RθJA Thermal Resistance, Junction To Ambient RθJC Thermal Resistance, Junction To Case Max. 218.
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