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BSW68 - SILICON PLANAR EPITAXIAL NPN TRANSISTOR

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Part number BSW68
Manufacturer TT
File Size 108.25 KB
Description SILICON PLANAR EPITAXIAL NPN TRANSISTOR
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    SILICON PLANAR EPITAXIAL NPN TRANSISTOR BSW68 • Hermetic TO-39 Metal package. • Ideally suited for Switching and General Purpose Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO Collector – Base Voltage 150V VCEO Collector – Emitter Voltage 150V VEBO Emitter – Base Voltage 6V IC Continuous Collector Current 1.0A ICM Peak Collector Current 2A PD Total Power Dissipation at TA = 25°C 0.795W Derate Above 25°C 4.5mW/°C PD Total Power Dissipation at TC = 25°C 5W Derate Above 25°C 28.6mW/°C TJ Junction Temperature Range -65 to +200°C Tstg Storage Temperature Range -65 to +200°C THERMAL PROPERTIES Symbols Parameters RθJA Thermal Resistance, Junction To Ambient RθJC Thermal Resistance, Junction To Case Max.
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