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D1094UK - RF Silicon Mosfet

General Description

Single-Ended RF Silicon Mosfet.

Source Breakdown Voltage BVGSS Gate Source Breakdown Voltage ID (sat) Drain Current Tstg Storage Temperature Tj Maximum Op

Key Features

  • Simplified Amplifier Design.
  • Suitable for Broad Band.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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RF Silicon Mosfet 20W 500MHz 28V Single-Ended D1094UK Features: • Simplified Amplifier Design • Suitable for Broad Band Applications • Low Crss • Simple Bias Circuits • Low Noise • High Gain – 11dB Minimum • RoHS Compliant Description: Single-Ended RF Silicon Mosfet. 20W at 500MHz, 28V Absolute Maximum Ratings (TA = 25°C unless otherwise noted) PD Power Dissipation BVDSS Drain – Source Breakdown Voltage BVGSS Gate – Source Breakdown Voltage ID (sat) Drain Current Tstg Storage Temperature Tj Maximum Operating Junction Temperature Thermal Properties SYMBOL PARAMETER RθJC Thermal Resistance, Junction to Case 50W 65V +20V 6A -65 to +150°C 200°C MAX UNITS 3.