D1094UK Overview
Description
Single-Ended RF Silicon Mosfet. 20W at 500MHz, 28V PD Power Dissipation BVDSS Drain – Source Breakdown Voltage BVGSS Gate – Source Breakdown Voltage ID (sat) Drain Current Tstg Storage Temperature Tj Maximum Operating Junction Temperature Thermal Properties SYMBOL PARAMETER RθJC 50W 65V +20V 6A -65 to +150°C 200°C MAX UNITS 3.5 °C/W General Note TT Electronics reserves the right to make changes in product specification without notice or liability.
Key Features
- Simplified Amplifier Design
- Suitable for Broad Band Applications
- Simple Bias Circuits
- High Gain – 11dB Minimum
- RoHS Compliant
