Datasheet4U Logo Datasheet4U.com

2SA1385-Z - Transistor

Key Features

  • Low VCE(sat):VCE(sat)=-0.18 V TYP. +0.2 9.70 -0.2 +0.15 5.55 -0.15 +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current pulse.
  • Total power dissipation Junction temperature Storage temperature.
  • PW 10ms, duty cycle 50%. Symbol VCBO VCEO VEBO IC ICP PT.

📥 Download Datasheet

Datasheet Details

Part number 2SA1385-Z
Manufacturer TY Semiconductor
File Size 76.57 KB
Description Transistor
Datasheet download datasheet 2SA1385-Z Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SA1385-Z PNP Silicon Transistor NEC
2SA1385-Z PNP Transistor Kexin
2SA1385-Z SILICON POWER TRANSISTOR Renesas
2SA1385 PNP Silicon Transistor NEC
2SA1380 PNP/NPN Epitaxial Planar Silicon Transistors Sanyo Semicon Device

Other Datasheets by TY Semiconductor

Part Number Description
2SA1384 Transistor
2SA1362 Transistors
2SA1363 Transistors
2SA1364 Transistors
2SA1365 Transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SMD Type Transistors Product specification 2SA1385-Z TO-252 +0.15 1.50 -0.15 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 +0.15 6.50-0.15 +0.2 5.30-0.2 Features Low VCE(sat):VCE(sat)=-0.18 V TYP. +0.2 9.70 -0.2 +0.15 5.55 -0.15 +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current pulse * Total power dissipation Junction temperature Storage temperature * PW 10ms, duty cycle 50%.