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2SA1575 - Transistor

Key Features

  • High fT. . High breakdown voltage. Small reverse transfer capacitance and excellent. High-frequency characteristic. Adoption of FBET process. Absolute Maximum Ratings TA=25 Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Collector current (pulse) Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC 1.3 Tj Tstg 150 -55 to +150 W Rating -200 -200 -4 -100 -20.

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Datasheet Details

Part number 2SA1575
Manufacturer TY Semiconductor
File Size 126.80 KB
Description Transistor
Datasheet download datasheet 2SA1575 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Product specification 2SA1575 Features High fT.. High breakdown voltage. Small reverse transfer capacitance and excellent. High-frequency characteristic. Adoption of FBET process. Absolute Maximum Ratings TA=25 Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Collector current (pulse) Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC 1.3 Tj Tstg 150 -55 to +150 W Rating -200 -200 -4 -100 -200 500 Unit V V V mA mA mW http://www.twtysemi.com sales@twtysemi.com 4008-318-123 1 of 2 Free Datasheet http://www.datasheet4u.