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KE183W - (KE183W - KE253W)

Features

  • Metal silicon junction,majority carrier conduction Low power loss,high efficiency 0.50 +0.1 3.7-0.1 0.1max 0.35 Absolute Maximum Ratings Ta = 25 Parameter Regulator current at specified test Knee impedance Test Voltageat I=0.8 IP Peak Operating Voltage A 90Hz signal VK with RMS value equal to 10% of test voltage ,VK,is superimposed on VK:RK=VK/ik DC Power Operating junction temperature range Storage temperature range Typical temperature coefficient Symbol IP VK VBO RDK PD TJ TSTG TC -0.20 to.

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Datasheet Details

Part number KE183W
Manufacturer TY Semiconductor
File Size 79.00 KB
Description (KE183W - KE253W)
Datasheet download datasheet KE183W Datasheet
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Product specification KE183W thru KE253W SOD-123 +0.1 2.7-0.1 +0.1 0.55-0.1 Unit: mm +0.05 1.1-0.05 Features Metal silicon junction,majority carrier conduction Low power loss,high efficiency 0.50 +0.1 3.7-0.1 0.1max 0.35 Absolute Maximum Ratings Ta = 25 Parameter Regulator current at specified test Knee impedance Test Voltageat I=0.8 IP Peak Operating Voltage A 90Hz signal VK with RMS value equal to 10% of test voltage ,VK,is superimposed on VK:RK=VK/ik DC Power Operating junction temperature range Storage temperature range Typical temperature coefficient Symbol IP VK VBO RDK PD TJ TSTG TC -0.20 to -0.15 KE183W 18 KE203W 20 3.0 100.0 KE223W 22 KE253W 23 +0.05 0.1-0.02 Unit mA V V Ohm W 10 to 300 1.0 -50 to +150 -50 to +150 -0.20 to -0.32 -0.23 to -0.32 -0.23 to -0.
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