TP44100NM Overview
The TP44100NM is a 90mΩ, 650V GaN HEMT device with integrated driver circuit. The monolithic integration of driver minimizes inductance in the gate loop enabling safe and clean switching even at high-voltage high-frequency operations. This device makes the applications more efficient/reliable, and also reduces the size of the magnetic ponents dramatically.
TP44100NM Key Features
- 650V enhancement mode HEMT with integrated driver
- 90mΩ RDSON
- 5V PWM input
- UVLO protection
- Zero reverse recovery
- Low quiescent current driver
- Adjustable turn-on slew rate
- Dv/Dt immunity both with/without driver-supply
- Low propagation delay for up to 2MHz operation
TP44100NM Applications
- As switching FETs in singles, or in pairs as half-bridges