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TP44100SG - 650V GaN HEMT

General Description

The TP44100SG is a 90 mΩ 650 V SUPERIOR GaN HEMT power device.

With low input/output capacitances and a low inductance QFN package, the device allows high frequency switching.

Key Features

  • 650 V e-mode power HEMT.
  • RDSON: 90 mΩ.
  • IDS: 19 A (max) / IDSpulse: 30 A (max).
  • ESD protection on all pins.
  • Adjustable turn-on/-off speed.
  • Reverse conduction capability.
  • Zero reverse-recovery loss.
  • High switching frequency capability.
  • LV-isolated thermal-pad for better thermal connection even with current-sense resistors.
  • Interfaces with 6 V and ≥12 V drivers (see.

📥 Download Datasheet

Datasheet Details

Part number TP44100SG
Manufacturer Tagore
File Size 920.71 KB
Description 650V GaN HEMT
Datasheet download datasheet TP44100SG Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TP44100SG SUPERIOR GaN TP44100SG – 90 mΩ, 650 V GaN HEMT 1.0 Features • 650 V e-mode power HEMT • RDSON: 90 mΩ • IDS: 19 A (max) / IDSpulse: 30 A (max) • ESD protection on all pins • Adjustable turn-on/-off speed • Reverse conduction capability • Zero reverse-recovery loss • High switching frequency capability • LV-isolated thermal-pad for better thermal connection even with current-sense resistors • Interfaces with 6 V and ≥12 V drivers (see Application Information) (Top View) (Bottom View) Figure 1 Device Image (22 pin 5×7×0.8 mm QFN Package) 2.