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TP44200NM - 650V GaN HEMT

General Description

The TP44200NM is a 180 mΩ, 650 V GaN HEMT device with integrated driver circuit.

The monolithic integration of driver minimizes inductance in the gate loop enabling safe and clean switching even at high-voltage high-frequency operations.

Key Features

  • 650 V enhancement mode HEMT with integrated driver.
  • RDSON: 180 mΩ.
  • IDS: 10 A (max) / IDSpulse: 15 A (max).
  • 5 V PWM input.
  • UVLO protection.
  • Zero reverse recovery.
  • Low quiescent current driver.
  • Adjustable turn-on slew rate.
  • Dv/Dt immunity both with/without driver-supply.
  • Low propagation delay for up to 2 MHz operation.
  • Thermal pad (LV) isolated from the source for better thermal connection even with.

📥 Download Datasheet

Datasheet Details

Part number TP44200NM
Manufacturer Tagore
File Size 1.02 MB
Description 650V GaN HEMT
Datasheet download datasheet TP44200NM Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TP44200NM TP44200NM – 180 mΩ, 650 V GaN HEMT with Integrated Driver and Protection 1.0 Features • 650 V enhancement mode HEMT with integrated driver • RDSON: 180 mΩ • IDS: 10 A (max) / IDSpulse: 15 A (max) • 5 V PWM input • UVLO protection • Zero reverse recovery • Low quiescent current driver • Adjustable turn-on slew rate • Dv/Dt immunity both with/without driver-supply • Low propagation delay for up to 2 MHz operation • Thermal pad (LV) isolated from the source for better thermal connection even with sense resistors (Top view) (Bottom View) Figure 1 Device Image (22pin 5×7×0.85 mm QFN Package) 2.