Datasheet4U Logo Datasheet4U.com

TP44200NM - 650V GaN HEMT

Datasheet Summary

Description

The TP44200NM is a 180 mΩ, 650 V GaN HEMT device with integrated driver circuit.

The monolithic integration of driver minimizes inductance in the gate loop enabling safe and clean switching even at high-voltage high-frequency operations.

Features

  • 650 V enhancement mode HEMT with integrated driver.
  • RDSON: 180 mΩ.
  • IDS: 10 A (max) / IDSpulse: 15 A (max).
  • 5 V PWM input.
  • UVLO protection.
  • Zero reverse recovery.
  • Low quiescent current driver.
  • Adjustable turn-on slew rate.
  • Dv/Dt immunity both with/without driver-supply.
  • Low propagation delay for up to 2 MHz operation.
  • Thermal pad (LV) isolated from the source for better thermal connection even with.

📥 Download Datasheet

Datasheet preview – TP44200NM

Datasheet Details

Part number TP44200NM
Manufacturer Tagore
File Size 1.02 MB
Description 650V GaN HEMT
Datasheet download datasheet TP44200NM Datasheet
Additional preview pages of the TP44200NM datasheet.

📁 Similar Datasheet

  • TP4045C - Photovoltaic Solar Cell Protection Schottky Diode (HY)
  • TP4054 - Standalone Linear Li-lon Battery Charger (NanJing Top Power)
  • TP4055 - 500mA Linear Li-Ion Battery Charger (NanJing Top Power)
  • TP4055C - 30mA-600mA linear lithium-ion battery charger (ChipSourceTek)
  • TP4056 - 1A linear lithium-ion battery charger (UMW)
  • TP4056 - 1A Standalone Linear Li-lon Battery Charger (NanJing Top Power)
  • TP4056 - 1A lithium battery charger (TPOWER)
  • TP4056 - 1A Linear Li-Ion Battery Charger (Chipown)
  • TP4057 - 500mA Linear Li-Ion Battery Charger (NanJing Top Power)
  • TP4057 - 500mA linear lithium ion battery charger (UMW)
Other Datasheets by Tagore

Full PDF Text Transcription

Click to expand full text
TP44200NM TP44200NM – 180 mΩ, 650 V GaN HEMT with Integrated Driver and Protection 1.0 Features • 650 V enhancement mode HEMT with integrated driver • RDSON: 180 mΩ • IDS: 10 A (max) / IDSpulse: 15 A (max) • 5 V PWM input • UVLO protection • Zero reverse recovery • Low quiescent current driver • Adjustable turn-on slew rate • Dv/Dt immunity both with/without driver-supply • Low propagation delay for up to 2 MHz operation • Thermal pad (LV) isolated from the source for better thermal connection even with sense resistors (Top view) (Bottom View) Figure 1 Device Image (22pin 5×7×0.85 mm QFN Package) 2.
Published: |