TP44200NM Overview
The TP44200NM is a 180 mΩ, 650 V GaN HEMT device with integrated driver circuit. The monolithic integration of driver minimizes inductance in the gate loop enabling safe and clean switching even at high-voltage high-frequency operations. This device makes the applications more efficient and reliable, and also helps reduce the size of the magnetic ponents.
TP44200NM Key Features
- 650 V enhancement mode HEMT with integrated driver
- RDSON: 180 mΩ
- IDS: 10 A (max) / IDSpulse: 15 A (max)
- 5 V PWM input
- UVLO protection
- Zero reverse recovery
- Low quiescent current driver
- Adjustable turn-on slew rate
- Dv/Dt immunity both with/without driver-supply
- Low propagation delay for up to 2 MHz operation
TP44200NM Applications
- As switching FETs in singles, or in pairs as half-bridges