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TP44200NM - 650V GaN HEMT

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TP44200NM 650V GaN HEMT by Tagore - Datasheet Preview — Datasheet preview – TP44200NM

Datasheet Details

Part number	TP44200NM
Manufacturer	Tagore
File Size	1.02 MB
Description	650V GaN HEMT
Datasheet	TP44200NM Datasheet
Additional preview pages of the TP44200NM datasheet.

Product details

Description

The TP44200NM is a 180 mΩ, 650 V GaN HEMT device with integrated driver circuit.

Features

650 V enhancement mode HEMT with integrated driver.
RDSON: 180 mΩ.
IDS: 10 A (max) / IDSpulse: 15 A (max).
5 V PWM input.
UVLO protection.
Zero reverse recovery.
Low quiescent current driver.
Adjustable turn-on slew rate.
Dv/Dt immunity both with/without driver-supply.
Low propagation delay for up to 2 MHz operation.
Thermal pad (LV) isolated from the source for better thermal connection even with.

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Published: Dec 4, 2024 |