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T35L6432A - 64K x 32 SRAM

Description

The Taiwan Memory Technology Synchronous Burst RAM family employs: high-speed, low power CMOS design using advanced triple-layer polysilicon, double-layer metal technology.

Each memory cell consists of four transistors and two high valued resistors.

Features

  • ¡EFast Access times: 4.5, 5, 6, 7, and 8ns ¡EFast clock speed: 125,100, 83, 66, and 50 MHz ¡EProvide high performance 3-1-1-1 access rate ¡EFast OE access times: 4.5, 5 and 6ns ¡ESingle 3.3V +10%/-5% power supply ¡ECommon data inputs and data outputs ¡EBYTE WRITE ENABLE and GLOBAL WRITE control ¡EThree chip enables for depth expansion and address pipelining ¡EAddress, control, input, and output pipelined registers ¡EInternally self-timed WRITE CYCLE ¡EWRITE pass-through capability ¡EBurst contro.

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Datasheet preview – T35L6432A

Datasheet Details

Part number T35L6432A
Manufacturer Taiwan Memory Technology
File Size 246.16 KB
Description 64K x 32 SRAM
Datasheet download datasheet T35L6432A Datasheet
Additional preview pages of the T35L6432A datasheet.

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Full PDF Text Transcription

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tm TE CH SYNCHRONOUS BURST SRAM T35L6432A 64K x 32 SRAM 3.3V supply, fully registered inputs and outputs, burst counter FEATURES ¡EFast Access times: 4.5, 5, 6, 7, and 8ns ¡EFast clock speed: 125,100, 83, 66, and 50 MHz ¡EProvide high performance 3-1-1-1 access rate ¡EFast OE access times: 4.5, 5 and 6ns ¡ESingle 3.
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