T35L6432B Description
The Taiwan Memory Technology Synchronous Burst RAM family employs high-speed, low power CMOS design using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high valued resistors. The T35L6432B SRAM integrates 65536 x 32 SRAM cells with advanced synchronous peripheral circuitry and a 2-bit counter for internal burst operation.
T35L6432B Key Features
- Fast Access times: 9 / 10 / 11 / 12 ns
- Single 3.3V (+0.3V/-0.165V) power supply
- mon data inputs and data outputs
- Individual BYTE WRITE ENABLE and
- Three chip enables for depth expansion and
- Clock-controlled and registered address, data
- Internally self-timed WRITE CYCLE
- Burst control pins ( interleaved or linear burst
- High 30pF output drive capability at rated access
- SNOOZE MODE for reduced power standby