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T35L6432B - 64K x 32 SRAM

Description

The Taiwan Memory Technology Synchronous Burst RAM family employs high-speed, low power CMOS design using advanced triple-layer polysilicon, double-layer metal technology.

Each memory cell consists of four transistors and two high valued resistors.

Features

  • Fast Access times: 9 / 10 / 11 / 12 ns.
  • Single 3.3V (+0.3V/-0.165V) power supply.
  • Common data inputs and data outputs.
  • Individual BYTE WRITE ENABLE and GLOBAL WRITE control.
  • Three chip enables for depth expansion and address pipelining.
  • Clock-controlled and registered address, data I/Os and control signals.
  • Internally self-timed WRITE CYCLE.
  • Burst control pins ( interleaved or linear burst sequence).
  • High 30pF outp.

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Datasheet preview – T35L6432B

Datasheet Details

Part number T35L6432B
Manufacturer Taiwan Memory Technology
File Size 159.00 KB
Description 64K x 32 SRAM
Datasheet download datasheet T35L6432B Datasheet
Additional preview pages of the T35L6432B datasheet.

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Full PDF Text Transcription

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tm TE CH SYNCHRONOUS BURST SRAM T35L6432B 64K x 32 SRAM Flow-Through Burst Mode FEATURES • Fast Access times: 9 / 10 / 11 / 12 ns • Single 3.3V (+0.3V/-0.165V) power supply • Common data inputs and data outputs • Individual BYTE WRITE ENABLE and GLOBAL WRITE control • Three chip enables for depth expansion and address pipelining • Clock-controlled and registered address, data I/Os and control signals • Internally self-timed WRITE CYCLE • Burst control pins ( interleaved or linear burst sequence) • High 30pF output drive capability at rated access time • SNOOZE MODE for reduced power standby • Burst Sequence : - Interleaved (MODE=NC or VCC) - Linear (MODE=GND) OPTIONS MARKING -9 -10 -11 -12 Flowthrough 2-1-1-1 Access time Cycle time 9ns 10.
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