T35L6432B
FEATURES
- Fast Access times: 9 / 10 / 11 / 12 ns
- Single 3.3V (+0.3V/-0.165V) power supply
- mon data inputs and data outputs
- Individual BYTE WRITE ENABLE and
GLOBAL WRITE control
- Three chip enables for depth expansion and address pipelining
- Clock-controlled and registered address, data
I/Os and control signals
- Internally self-timed WRITE CYCLE
- Burst control pins ( interleaved or linear burst sequence)
- High 30p F output drive capability at rated access time
- SNOOZE MODE for reduced power standby
- Burst Sequence :
- Interleaved (MODE=NC or VCC)
- Linear (MODE=GND)
OPTIONS
MARKING
-9 -10 -11
-12
Flowthrough 2-1-1-1
Access time Cycle time
9ns 10.5ns
10ns 15ns
11ns 15ns
12ns 15ns
PACKAGE
100-pin QFP 100-pin TQFP package code
Part Number Examples
PART NO. speed Package
T35L6432B-10Q 10ns QFP
T35L6432B-12T 12ns TQFP
GENERAL DESCRIPTION
The Taiwan Memory Technology Synchronous Burst RAM family employs high-speed, low power CMOS design using advanced...
